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G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection

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Chiny ShenzhenYijiajie Electronic Co., Ltd. Certyfikaty
Chiny ShenzhenYijiajie Electronic Co., Ltd. Certyfikaty
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G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection

G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection
G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection

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Szczegóły Produktu:
Miejsce pochodzenia: Japonia
Numer modelu: G12183-003K
Zapłata:
Minimalne zamówienie: 1
Cena: negocjowalne
Szczegóły pakowania: Papierowe pudełko
Czas dostawy: 3-5 dni pracy
Zasady płatności: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Możliwość Supply: 5000szt

G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection

Opis
Typ opakowania: DO-18 Typ mocowania: Otwór przelotowy (3-pinowy)
Liczba pinów: 3 szpilki Wymiary okna: 3,0 ± 0,1 mm
Średnica ołowiu: 0,45 mm Dystans: -0,2 ≤x≤+0,2 mm
Podkreślić:

InGaAs PIN photodiode for optical power meters

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High-performance InGaAs photodiode laser detection

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Infrared photoelectric sensor with InGaAs technology

 

    G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection

 

 

Features:


InGaAs PIN photodiode for long near-infrared detection
Wide spectral response: 0.9 µm to 2.6 µm
High sensitivity at peak wavelength of 2.3 µm
High responsivity: 1.0 to 1.3 A/W
Small active area: φ0.3 mm
Low dark current for improved signal-to-noise ratio
Compact TO-18 metal package
Good response speed and low noise
Operating temperature: -40°C to +85°C
RoHS compliant
Suitable for non-cooled operation

 

 

 

Applications :


Optical power meters
Gas analyzers
Moisture meters
NIR (near-infrared) photometry & spectroscopy
Industrial process monitoring
Environmental analysis
Optical communication testing

 

 

Parameter

Min

Typ

Max

Unit

Test Condition

Spectral Response Range 0.9 - 2.6 μm Ta=25°C
Peak Sensitivity Wavelength - 2.3 - μm Ta=25°C
Photosensitivity (Responsivity) 1.0 1.3 - A/W At λ=2.3 μm, Ta=25°C
Dark Current - 0.4 4 μA Vr=0.5 V, Ta=25°C
Dark Current Temp. Coefficient - 1.035 - times/°C Vr=0.5 V
Cut off Frequency - 50 - MHz Ta=25°C
Terminal Capacitance - 50 100 pF Vr=0 V, f=10 kHz
Reverse Voltage (Max.) - - 1 V Ta=25°C
Shunt Resistance 20 - 100 Ta=25°C
Operating Temperature Range -40 - +85 °C Full specification
Storage Temperature Range -55 - +125 °C -
Photosensitive Area - φ0.3 - mm -
Number of Elements - 1 - - -
Soldering Temperature - - 260 °C ≤10s duration
Window Material - Borosilicate Glass - - -

 

G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection 0

Szczegóły kontaktu
ShenzhenYijiajie Electronic Co., Ltd.

Osoba kontaktowa: Miss. Xu

Tel: 86+13352990255

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